On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals

The results of basic ammonothermal crystallization gallium nitride are described. material is mainly analyzed in terms the formation stress (called stress-induced polarization effect) and defects (threading dislocations) appearing due to a relaxation process. Gallium grown different positions zone examined cross-polarized light. Interfaces between native seeds new-grown layers investigated ultraviolet etch pit densities determined compared. Based on obtained model defect presented. New solutions for improving structural quality crystals proposed.